H2N2V1, Main, Exploration, bibRecord, 002062

Low temperature growth of ain films by microwave plasma chemical vapour deposition using an AlBr3-H2N2 gas system

Identifieur interne : 002062 ( Main/Exploration ); précédent : 002061; suivant : 002063

Low temperature growth of ain films by microwave plasma chemical vapour deposition using an AlBr3-H2N2 gas system

Auteurs : Y. Someno [Japon] ; M. Sasaki ; T. Hirai

Source :

Thin solid films [ 0040-6090 ] ; 1991.

RBID : Pascal:92-0281710

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline, Couche mince, Composé minéral, Aluminium Nitrure, Dépôt chimique phase vapeur, Plasma, Température, Support, Composition chimique, Microstructure, Texture, Cristallinité, Support Si.
Wicri :
- topic : Composé minéral.

English descriptors

KwdEn :
- Aluminium Nitrides, Chemical composition, Chemical vapor deposition, Crystal growth, Crystallinity, Experimental study, Inorganic compound, Microstructure, Plasma, Support, Temperature, Texture, Thin film.

Abstract

Polycrystalline AIN films were grown on Si(100) substrates by coaxial line-type microwave plasma chemical vapour deposition using an AlBr₃-H₂-N₂ gas system. The effects of substrate temperature and N₂:AlBr₃ gas flow ratio on the film structure, composition, crystallinity and deposition rate were investigated. Polycrystalline AIN films of fine-grained structure and excellent c axis orientation were grown at T_sub=520-560^oC and at N₂:AlBr₃ gas flow ratios above 13

Affiliations:

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to stream Main, to step Curation: 002062

Le document en format XML

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-H<sub>2</sub>
N<sub>2</sub>
 gas system</title>
<author><name sortKey="Someno, Y" sort="Someno, Y" uniqKey="Someno Y" first="Y." last="Someno">Y. Someno</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Alps Electric Co., Ltd.</s1>
<s2>Ohta-ku, Tokyo 145</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
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<country>Japon</country>
<placeName><settlement type="city">Tokyo</settlement>
<region type="région">Région de Kantō</region>
</placeName>
</affiliation>
</author>
<author><name sortKey="Sasaki, M" sort="Sasaki, M" uniqKey="Sasaki M" first="M." last="Sasaki">M. Sasaki</name>
</author>
<author><name sortKey="Hirai, T" sort="Hirai, T" uniqKey="Hirai T" first="T." last="Hirai">T. Hirai</name>
</author>
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<idno type="wicri:explorRef" wicri:stream="PascalFrancis" wicri:step="Checkpoint">000108</idno>
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<sourceDesc><biblStruct><analytic><title xml:lang="en" level="a">Low temperature growth of ain films by microwave plasma chemical vapour deposition using an AlBr<sub>3</sub>
-H<sub>2</sub>
N<sub>2</sub>
 gas system</title>
<author><name sortKey="Someno, Y" sort="Someno, Y" uniqKey="Someno Y" first="Y." last="Someno">Y. Someno</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Alps Electric Co., Ltd.</s1>
<s2>Ohta-ku, Tokyo 145</s2>
<s3>JPN</s3>
<sZ>1 aut.</sZ>
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<country>Japon</country>
<placeName><settlement type="city">Tokyo</settlement>
<region type="région">Région de Kantō</region>
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<author><name sortKey="Sasaki, M" sort="Sasaki, M" uniqKey="Sasaki M" first="M." last="Sasaki">M. Sasaki</name>
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<author><name sortKey="Hirai, T" sort="Hirai, T" uniqKey="Hirai T" first="T." last="Hirai">T. Hirai</name>
</author>
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<series><title level="j" type="main">Thin solid films</title>
<title level="j" type="abbreviated">Thin solid films</title>
<idno type="ISSN">0040-6090</idno>
<imprint><date when="1991">1991</date>
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<seriesStmt><title level="j" type="main">Thin solid films</title>
<title level="j" type="abbreviated">Thin solid films</title>
<idno type="ISSN">0040-6090</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Nitrides</term>
<term>Chemical composition</term>
<term>Chemical vapor deposition</term>
<term>Crystal growth</term>
<term>Crystallinity</term>
<term>Experimental study</term>
<term>Inorganic compound</term>
<term>Microstructure</term>
<term>Plasma</term>
<term>Support</term>
<term>Temperature</term>
<term>Texture</term>
<term>Thin film</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term>
<term>Croissance cristalline</term>
<term>Couche mince</term>
<term>Composé minéral</term>
<term>Aluminium Nitrure</term>
<term>Dépôt chimique phase vapeur</term>
<term>Plasma</term>
<term>Température</term>
<term>Support</term>
<term>Composition chimique</term>
<term>Microstructure</term>
<term>Texture</term>
<term>Cristallinité</term>
<term>Support Si</term>
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<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Composé minéral</term>
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<front><div type="abstract" xml:lang="en">Polycrystalline AIN films were grown on Si(100) substrates by coaxial line-type microwave plasma chemical vapour deposition using an AlBr<sub>3</sub>
-H<sub>2</sub>
-N<sub>2</sub>
 gas system. The effects of substrate temperature and N<sub>2</sub>
:AlBr<sub>3</sub>
 gas flow ratio on the film structure, composition, crystallinity and deposition rate were investigated. Polycrystalline AIN films of fine-grained structure and excellent c axis orientation were grown at T<sub>sub</sub>
=520-560<sup>o</sup>
C and at N<sub>2</sub>
:AlBr<sub>3</sub>
 gas flow ratios above 13</div>
</front>
</TEI>
<affiliations><list><country><li>Japon</li>
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<settlement><li>Tokyo</li>
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<tree><noCountry><name sortKey="Hirai, T" sort="Hirai, T" uniqKey="Hirai T" first="T." last="Hirai">T. Hirai</name>
<name sortKey="Sasaki, M" sort="Sasaki, M" uniqKey="Sasaki M" first="M." last="Sasaki">M. Sasaki</name>
</noCountry>
<country name="Japon"><region name="Région de Kantō"><name sortKey="Someno, Y" sort="Someno, Y" uniqKey="Someno Y" first="Y." last="Someno">Y. Someno</name>
</region>
</country>
</tree>
</affiliations>
</record>

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Low temperature growth of ain films by microwave plasma chemical vapour deposition using an AlBr3-H2N2 gas system

Low temperature growth of ain films by microwave plasma chemical vapour deposition using an AlBr3-H2N2 gas system

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri